Invention Grant
- Patent Title: Fuse circuit and semiconductor device including the same
- Patent Title (中): 保险丝电路和包括其的半导体器件
-
Application No.: US12591720Application Date: 2009-11-30
-
Publication No.: US07940116B2Publication Date: 2011-05-10
- Inventor: Sang-Kyun Park
- Applicant: Sang-Kyun Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0049070 20090603
- Main IPC: H01H37/76
- IPC: H01H37/76 ; H01H85/00
Abstract:
A fuse circuit may include a fuse section which generates a fuse control signal at an output terminal of the fuse circuit in response to a power-up signal according to a status of a fuse in the fuse section; and a current path break section which detects the status of the fuse in the fuse section prior to a trip period of the power-up signal and breaks an inrush current path created in the fuse section during the trip period based on the detected status.
Public/Granted literature
- US20100308896A1 Fuse circuit and semiconductor device including the same Public/Granted day:2010-12-09
Information query
