Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12753582Application Date: 2010-04-02
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Publication No.: US07940112B2Publication Date: 2011-05-10
- Inventor: Shinya Okuno , Kiyohiro Furutani
- Applicant: Shinya Okuno , Kiyohiro Furutani
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Morrison & Foerster LLP
- Priority: JP2009-092282 20090406
- Main IPC: H01L35/00
- IPC: H01L35/00 ; H03K17/16 ; G11C7/04

Abstract:
To include a first X decoder constituted by a transistor whose off-leakage current has a first temperature characteristic, a pre-decoder circuit and a peripheral circuit constituted by a transistor whose off-leakage current has a second temperature characteristic, a power supply control circuit that inactivates the X decoder when a temperature exceeds a first threshold during a standby state, and a power supply control circuit that inactivates the pre-decoder and the peripheral circuit when a temperature exceeds a second threshold during the standby state. According to the present invention, whether power supply control is performed on a plurality of circuit blocks is determined based on different temperatures, therefore optimum power supply control can be performed on each of circuit blocks.
Public/Granted literature
- US20100253317A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-10-07
Information query
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