Invention Grant
- Patent Title: Semiconductor memory device and method for driving the same
- Patent Title (中): 半导体存储器件及其驱动方法
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Application No.: US12005584Application Date: 2007-12-27
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Publication No.: US07940095B2Publication Date: 2011-05-10
- Inventor: Hwang Hur
- Applicant: Hwang Hur
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR10-2007-0020305 20070228
- Main IPC: H03L7/06
- IPC: H03L7/06

Abstract:
The present invention intends to provide a semiconductor memory device including a delay locked loop (DLL) circuit capable of generating a duty-corrected delay locked clock. A semiconductor memory device includes: a DLL circuit for generating a delay locked clock through a delay locked operation; and a duty-correction circuit for correcting a duty ratio of the delay locked clock by using the delay locked clock and a divided clock generated by dividing the delay locked clock by an even value.
Public/Granted literature
- US20080204094A1 Semiconductor memory device and method for driving the same Public/Granted day:2008-08-28
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