Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US12177684Application Date: 2008-07-22
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Publication No.: US07940083B2Publication Date: 2011-05-10
- Inventor: Keitaro Yamashita
- Applicant: Keitaro Yamashita
- Applicant Address: TW Miao-Li County
- Assignee: Chimei Innolux Corporation
- Current Assignee: Chimei Innolux Corporation
- Current Assignee Address: TW Miao-Li County
- Agency: Morris, Manning & Martin, LLP
- Agent Tim Tingkang Xia
- Priority: JP2007-190536 20070723
- Main IPC: H03K19/0175
- IPC: H03K19/0175 ; H03K19/094 ; H03L5/00

Abstract:
A semiconductor integrated circuit capable of maintaining characteristics of transistors in a circuit including a plurality of cascade connected transistors. The circuit includes an inverter which has a series connection of P-MOS transistors and a pair of N-MOS transistors. The P-MOS transistor is connected to a high potential source VH and the N-MOS transistor is connected to a low potential source VL. The gate of each MOS transistor is connected to an input signal line. The inverter circuit further includes a P-MOS transistor connected between a node and input signal line, and an N-MOS transistor connected between a node of the N-MOS transistors and the input signal line. The gates of the P-MOS transistor and the N-MOS transistor are connected to an output signal line of the inverter circuit.
Public/Granted literature
- US20090027103A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2009-01-29
Information query
IPC分类: