Invention Grant
- Patent Title: Semiconductor device and method for producing a semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12403100Application Date: 2009-03-12
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Publication No.: US07939850B2Publication Date: 2011-05-10
- Inventor: Anton Mauder , Giulliano Aloise
- Applicant: Anton Mauder , Giulliano Aloise
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, P.L.L.C.
- Main IPC: H01L29/74
- IPC: H01L29/74
Abstract:
A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is arranged, the drift region including charge compensation zones and drift zones arranged substantially parallel to one another. At least one charge carrier storage region which is at least partially free of charge compensation zones is arranged in the semiconductor body.
Public/Granted literature
- US20100230715A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE Public/Granted day:2010-09-16
Information query
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