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US07939844B2 Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same 有权
包含发射辐射的基于GAN的外延层序列的发光二极管芯片及其制造方法

Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same
Abstract:
A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
Abstract(Chinese):

发光二极管芯片（1）包括GaN基辐射发射外延层序列（3），有源区（19），n掺杂层（4）和p掺杂层（5）。 p型掺杂层（5）在其主表面（9）上面向远离有源区（19）的反射接触金属化（6）提供，反射接触金属化（6）包括一个放射性接触层（15）和一个反射层（16） ）。 提供了通过薄膜技术制造这种类型的LED芯片的方法，以及包含这种LED芯片的LED组件。

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