Invention Grant
- Patent Title: Semiconductor light emitting element
- Patent Title (中): 半导体发光元件
-
Application No.: US12216464Application Date: 2008-07-03
-
Publication No.: US07939836B2Publication Date: 2011-05-10
- Inventor: Akinori Yoneda , Akiyoshi Kinouchi
- Applicant: Akinori Yoneda , Akiyoshi Kinouchi
- Applicant Address: JP Anan
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2007-187686 20070718; JP2007-272377 20071019; JP2008-159821 20080619
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A semiconductor light emitting element having a rectangular shape in plan view comprising at least a first side and a second side adjacent to the first side, the semiconductor light emitting element including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a plurality of first electrodes having a long shape along the first side and being arranged on the first conductivity-type semiconductor layer in a lattice form of x columns (x≧2) along the first side and y rows (y>x) along the second side, and a second electrode arranged on the second conductivity-type semiconductor layer. The first electrode and the second electrode are arranged on the same surface side. The first electrode is surrounded by the first conductivity-type semiconductor layer, the second conductivity-type semiconductor layer, and the second electrode is provided.
Public/Granted literature
- US20090020769A1 Semiconductor light emitting element Public/Granted day:2009-01-22
Information query
IPC分类: