Invention Grant
- Patent Title: Light emitting apparatus and method for manufacturing the same
- Patent Title (中): 发光装置及其制造方法
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Application No.: US12762469Application Date: 2010-04-19
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Publication No.: US07939835B2Publication Date: 2011-05-10
- Inventor: Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
- Applicant: Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2001-345430 20011109; JP2002-143802 20020517
- Main IPC: H01L29/267
- IPC: H01L29/267

Abstract:
The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
Public/Granted literature
- US20100201662A1 LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2010-08-12
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