A solid-state image pickup device 1 includes a semiconductor substrate 10, light receiving unit 14 and light shielding film 20. The solid-state image pickup device 1 is back surface incident type and photoelectrically converts light indent on the back surface S2 of the semiconductor substrate 10 from an object into electrical charges and receives electrical charges produced by photoelectric conversion at the light receiving unit 14 to image the object. The light receiving unit 14 forms a PN junction diode with the semiconductor substrate 10. The light shielding film 20 is provided over a front surface S1 of the semiconductor substrate 10 so as to cover the light receiving unit 14. The light shielding film 20 serves to shield light incident on the front surface S1 from the outside of the solid-state image pickup device 1.