Invention Grant
- Patent Title: E-beam exposure apparatus
- Patent Title (中): 电子束曝光装置
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Application No.: US12323692Application Date: 2008-11-26
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Publication No.: US07939813B2Publication Date: 2011-05-10
- Inventor: Dong S. Jang
- Applicant: Dong S. Jang
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2008-0000383 20080102
- Main IPC: H01J37/00
- IPC: H01J37/00

Abstract:
An e-beam exposure apparatus includes an electron gun provide an e-beam for exposure to a resist layer formed on a substrate; an e-beam column part inducing the path of the e-beam generated from the electron gun; and an electron collecting part disposed at the periphery of the path of the e-beam projected from the e-beam column part on the resist layer to absorb scattered electrons resulting from emission of the incident e-beam from the resist layer.
Public/Granted literature
- US20090166552A1 E-Beam Exposure Apparatus Public/Granted day:2009-07-02
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