Invention Grant
- Patent Title: Method for fabricating a pattern
- Patent Title (中): 制作图案的方法
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Application No.: US11759622Application Date: 2007-06-07
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Publication No.: US07939451B2Publication Date: 2011-05-10
- Inventor: Shih-Chang Tsai , Chun-Hung Lee , Ming-Cheng Deng , Ta-Hung Yang
- Applicant: Shih-Chang Tsai , Chun-Hung Lee , Ming-Cheng Deng , Ta-Hung Yang
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method for fabricating a patter is provided as followed. First, a material layer is provided, whereon a patterned hard mask layer is formed. A spacer is deposited on the sidewalls of the patterned hard mask layer. Then, the patterned hard mask layer is removed, and an opening is formed between the adjacent spacers. Afterwards, a portion of the material layer is removed to form a patterned material layer by using the spacer as mask.
Public/Granted literature
- US20080305635A1 METHOD FOR FABRICATING A PATTERN Public/Granted day:2008-12-11
Information query
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