Invention Grant
- Patent Title: Inhibitors for selective deposition of silicon containing films
- Patent Title (中): 用于选择性沉积含硅膜的抑制剂
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Application No.: US11925518Application Date: 2007-10-26
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Publication No.: US07939447B2Publication Date: 2011-05-10
- Inventor: Matthias Bauer , Pierre Tomasini
- Applicant: Matthias Bauer , Pierre Tomasini
- Applicant Address: US AZ Phoenix
- Assignee: ASM America, Inc.
- Current Assignee: ASM America, Inc.
- Current Assignee Address: US AZ Phoenix
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for decelerating reactions between the silicon precursor and the chlorine-containing etchant; and selectively depositing a doped crystalline Si-containing film onto the substrate.
Public/Granted literature
- US20090111246A1 INHIBITORS FOR SELECTIVE DEPOSITION OF SILICON CONTAINING FILMS Public/Granted day:2009-04-30
Information query
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