Invention Grant
- Patent Title: Strontium ruthenium oxide interface
- Patent Title (中): 钌氧化钌界面
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Application No.: US12421916Application Date: 2009-04-10
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Publication No.: US07939442B2Publication Date: 2011-05-10
- Inventor: Bhaskar Srinivasan , Vassil Antonov , John Smythe
- Applicant: Bhaskar Srinivasan , Vassil Antonov , John Smythe
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Jeffert Jay & Polglaze, P.A.
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.
Public/Granted literature
- US20100258903A1 STRONTIUM RUTHENIUM OXIDE INTERFACE Public/Granted day:2010-10-14
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