Invention Grant
- Patent Title: Laser annealing method
- Patent Title (中): 激光退火方法
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Application No.: US12410787Application Date: 2009-03-25
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Publication No.: US07939435B2Publication Date: 2011-05-10
- Inventor: Naoto Kusumoto , Koichiro Tanaka
- Applicant: Naoto Kusumoto , Koichiro Tanaka
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP7-037705 19950202; JP7-068670 19950302
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans.
Public/Granted literature
- US20090186468A1 Laser Annealing Method Public/Granted day:2009-07-23
Information query
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