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US07939404B2 Manufacturing method of capacitor in semiconductor 有权
半导体电容器的制造方法

  • Patent Title: Manufacturing method of capacitor in semiconductor
  • Patent Title (中): 半导体电容器的制造方法
  • Application No.: US12648199
    Application Date: 2009-12-28
  • Publication No.: US07939404B2
    Publication Date: 2011-05-10
  • Inventor: Chi Hwan Jang
  • Applicant: Chi Hwan Jang
  • Applicant Address: KR Icheon
  • Assignee: Hynix Semiconductor Inc
  • Current Assignee: Hynix Semiconductor Inc
  • Current Assignee Address: KR Icheon
  • Priority: KR10-2009-0060711 20090703
  • Main IPC: H01L21/8242
  • IPC: H01L21/8242
Manufacturing method of capacitor in semiconductor
Abstract:
A manufacturing method of a capacitor of a semiconductor device includes a first step of forming a graphene seed film over a substrate; a second step of increasing surface energy of the graphene seed film and performing a first plasma process to the graphene seed film; a third step of growing a graphene on the graphene seed film; a fourth step of growing a nano tube or a nano wire using the graphene as a mask; and a fifth step of sequentially forming a dielectric film and a conductive layer over the nano tube or the nano wire.
Abstract(Chinese):

半导体器件的电容器的制造方法包括在基板上形成石墨烯种子膜的第一工序; 提高石墨烯种子膜的表面能并对石墨烯种子膜进行第一等离子体处理的第二步骤; 在石墨烯籽膜上生长石墨烯的第三步; 使用石墨烯作为掩模生长纳米管或纳米线的第四步骤; 以及在纳米管或纳米线上顺序地形成电介质膜和导电层的第五步骤。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232 ......场效应工艺
H01L21/8234 .......MIS工艺
H01L21/8239 ........存储器结构
H01L21/8242 .........动态随机存取存储结构（DRAM）
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