Invention Grant
US07939386B2 Image sensor applied with device isolation technique for reducing dark signals and fabrication method thereof
有权
图像传感器应用了用于减少暗信号的器件隔离技术及其制造方法
- Patent Title: Image sensor applied with device isolation technique for reducing dark signals and fabrication method thereof
- Patent Title (中): 图像传感器应用了用于减少暗信号的器件隔离技术及其制造方法
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Application No.: US12409453Application Date: 2009-03-23
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Publication No.: US07939386B2Publication Date: 2011-05-10
- Inventor: Jae-Young Rim , Ho-Soon Ko
- Applicant: Jae-Young Rim , Ho-Soon Ko
- Applicant Address: US DE Wilmington
- Assignee: Crosstek Capital, LLC
- Current Assignee: Crosstek Capital, LLC
- Current Assignee Address: US DE Wilmington
- Agency: McAndrews, Held & Malloy, Ltd.
- Priority: KR2003-91843 20031216
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention relates to an image sensor applied with a device isolation technique for reducing dark signals and a fabrication method thereof. The image sensor includes: a logic unit; and a light collection unit in which a plurality of photodiodes is formed, wherein the photodiodes are isolated from each other by a field ion-implantation region formed under a surface of a substrate and an insulation layer formed on the surface of the substrate.
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