Invention Grant
- Patent Title: Semiconductor device and manufacturing method therefor
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12364072Application Date: 2009-02-02
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Publication No.: US07939360B2Publication Date: 2011-05-10
- Inventor: Hiroshi Asami , Yoshihiro Nabe , Akihiro Morimoto
- Applicant: Hiroshi Asami , Yoshihiro Nabe , Akihiro Morimoto
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2008-029936 20080212
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/0203
Abstract:
A semiconductor device which includes a semiconductor chip formed with a light-reception area, a spacer, and a transparent substrate. The spacer is bonded to the semiconductor chip via a first adhesive and surrounding the light-reception area. The transparent substrate is bonded to the spacer via a second adhesive and disposed above the light-reception area. A first projection having a predetermined height is formed on a surface of the spacer which is on a side of the semiconductor chip, and the first projection abuts on the semiconductor chip.
Public/Granted literature
- US20090200629A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2009-08-13
Information query
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