Invention Grant
US07939223B2 Photomask using separated exposure technique, method of fabricating photomask, and apparatus for fabricating photomask by using the method
失效
使用分离曝光技术的光掩模，光掩模的制造方法以及使用该方法制造光掩模的装置
- Patent Title: Photomask using separated exposure technique, method of fabricating photomask, and apparatus for fabricating photomask by using the method
- Patent Title (中): 使用分离曝光技术的光掩模，光掩模的制造方法以及使用该方法制造光掩模的装置
-
Application No.: US11730454Application Date: 2007-04-02
-
Publication No.: US07939223B2Publication Date: 2011-05-10
- Inventor: Hak-seung Han , Seong-woon Choi , Byung-gook Kim , Hee-bom Kim , Sung-ho Park
- Applicant: Hak-seung Han , Seong-woon Choi , Byung-gook Kim , Hee-bom Kim , Sung-ho Park
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2006-0030588 20060404
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
A method of fabricating a photomask may include forming a light-shielding layer and a first resist film on a substrate, forming a first resist pattern by exposing first exposed regions of the first resist film to a first exposure source that may have a first energy, forming a first light shielding pattern by etching the selectively exposed light-shielding layer by using the first resist pattern as an etching mask, removing the first resist pattern, forming a second resist film on the first light-shielding layer, exposing second exposed regions of the second resist film that may have a desired pattern shape to a second exposure source that may have a second energy, forming a second light shielding pattern by etching the selectively exposed first light shielding pattern by using the second resist pattern as an etching mask, and removing the second resist pattern.
Public/Granted literature
Information query
