Invention Grant
- Patent Title: Method of manufacturing sub-micron silicon-carbide powder
- Patent Title (中): 亚微米碳化硅粉末的制造方法
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Application No.: US12069386Application Date: 2008-02-11
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Publication No.: US07939044B2Publication Date: 2011-05-10
- Inventor: Alexander Mukasyan , Vasiliy Mukasyan , Mikael Nersesyan , Surên Kharatyan , Hayk Khachatryan
- Applicant: Alexander Mukasyan , Vasiliy Mukasyan , Mikael Nersesyan , Surên Kharatyan , Hayk Khachatryan
- Main IPC: C01B31/36
- IPC: C01B31/36 ; C04B35/565

Abstract:
A method of manufacturing a silicon carbide powder with submicron size of powder particles wherein a homogeneous reactant mixture comprising a source of silicone, a source of carbon, and polytetrafluoroethylene is locally preheated in a sealed reaction chamber filled with an inert gas under pressure of 20 atm to 30 atm to a temperature sufficient to initiate an exothermic self-propagating reaction ranges from 650K to 900K. In the aforementioned homogeneous reactant mixture, the carbon source is used in the amount from 63 wt % to 68%, the silicon source is used in the amount of from 20 wt. % to 25 wt. %%, and the activated additive is used in the amount of from 8 wt. % to 15 wt. % per 100% of the entire homogeneous reactant mixture.
Public/Granted literature
- US20090202414A1 Method of manufacturing sub-micron silicon-carbide powder and composition for manufacturing thereof Public/Granted day:2009-08-13
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