Invention Grant
- Patent Title: Method and structure for avoiding hot carrier degradation and soft leakage damage to ESD protection circuit
- Patent Title (中): 避免热载流子降解和ESD保护电路软漏损的方法和结构
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Application No.: US09960882Application Date: 2001-09-21
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Publication No.: US07929262B1Publication Date: 2011-04-19
- Inventor: Vladislav Vashchenko , Peter Hopper , Ann Concannon
- Applicant: Vladislav Vashchenko , Peter Hopper , Ann Concannon
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Vollrath & Associates
- Agent Jurgen K. Vollrath
- Main IPC: H02H3/22
- IPC: H02H3/22
Abstract:
In a ESD protection device, hot carrier degradation and soft leakage are reduced by introducing a dynamic driver that includes a RC circuit for keeping the triggering circuit of the ESD device in an on-state for a certain period of time. This allows the current through the ESD protection device to be reduced during the RC delay time.
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