Invention Grant
US07928777B2 Semiconductor device and method of supplying internal power to semiconductor device
失效
向半导体器件提供内部电力的半导体器件和方法
- Patent Title: Semiconductor device and method of supplying internal power to semiconductor device
- Patent Title (中): 向半导体器件提供内部电力的半导体器件和方法
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Application No.: US12585499Application Date: 2009-09-16
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Publication No.: US07928777B2Publication Date: 2011-04-19
- Inventor: Toshikatsu Jinbo
- Applicant: Toshikatsu Jinbo
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2008-258027 20081003
- Main IPC: H03L7/00
- IPC: H03L7/00

Abstract:
Provided is a semiconductor device including a step-down circuit group including multiple step-down circuits that step down an external power supply voltage to a predetermined voltage; multiple functional circuits that require a reset operation upon power-on; and a power-on reset circuit that outputs a reset command to the multiple functional circuits, when an internal power supply voltage supplied from the step-down circuit group exceeds a voltage level necessary for an initialization operation. The multiple step-down circuits of the step-down circuit group are classified into a startup operating step-down circuit group that performs a step-down operation from power-on to supply the internal power supply voltage, and a startup non-operating step-down circuit group that stops operation upon power-on to interrupt supply of the internal power supply voltage. The startup non-operating step-down circuit group includes the multiple step-down circuits sequentially selected from one having a shortest wiring distance from the power-on reset circuit.
Public/Granted literature
- US20100085088A1 Semiconductor device and method of supplying internal power to semiconductor device Public/Granted day:2010-04-08
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