Invention Grant
US07928710B2 Voltage protection circuit for thin oxide transistors, and memory device and processor-based system using same
有权
薄氧化物晶体管的电压保护电路,以及使用其的存储器件和基于处理器的系统
- Patent Title: Voltage protection circuit for thin oxide transistors, and memory device and processor-based system using same
- Patent Title (中): 薄氧化物晶体管的电压保护电路,以及使用其的存储器件和基于处理器的系统
-
Application No.: US12726167Application Date: 2010-03-17
-
Publication No.: US07928710B2Publication Date: 2011-04-19
- Inventor: Dong Pan
- Applicant: Dong Pan
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G05F1/571
- IPC: G05F1/571 ; H02H9/04

Abstract:
Devices, reference voltage generators, systems and methods may include an embodiment of a voltage regulator output transistor using a thin gate insulator to provide a low output impedance despite having a semiconductor channel width that is relatively small. The output transistor is protected from damage by a clamping circuit provided to limit the gate-to-source voltage of the transistor such that damage to the output transistor should be reduced or prevented. One such clamping circuit includes a clamp transistor that receives a reference voltage at its gate. The magnitude of the reference voltage limits to voltage to which the gate of the transistor can be driven. A voltage reference circuit provides the reference voltage so that it compensates for process and temperature variations of the output transistor.
Public/Granted literature
Information query
IPC分类: