Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12285832Application Date: 2008-10-15
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Publication No.: US07928551B2Publication Date: 2011-04-19
- Inventor: Reiko Fujiwara , Akihiko Hatasawa , Fumitomo Watanabe
- Applicant: Reiko Fujiwara , Akihiko Hatasawa , Fumitomo Watanabe
- Applicant Address: JP Chuo-ku, Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Chuo-ku, Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-268504 20071016
- Main IPC: H01L23/02
- IPC: H01L23/02

Abstract:
In a semiconductor device, a first semiconductor chip is stacked on a wiring substrate and has first electrode pads disposed at predetermined positions on an upper surface thereof. A second semiconductor chip is stacked on the first semiconductor chip through an insulating member in an offset manner so that the first electrode pads are exposed. Support members support a back surface of a protruding portion of the second semiconductor chip through the insulating member.
Public/Granted literature
- US20090096111A1 Semiconductor device and method of manufacturing the same Public/Granted day:2009-04-16
Information query
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