Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12421111Application Date: 2009-04-09
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Publication No.: US07928529B2Publication Date: 2011-04-19
- Inventor: Hiroyuki Tomomatsu
- Applicant: Hiroyuki Tomomatsu
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John J. Patti; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Priority: JP2008-103003 20080411
- Main IPC: H01L31/102
- IPC: H01L31/102 ; H01L31/0232
Abstract:
A semiconductor device that attenuates light to the circuit element area is provided. The semiconductor device includes light-sensitive element area formed on substrate and a circuit element area formed on the substrate. Additionally, a multilayer wiring area is formed on circuit element area. A Tantalum film (which is generally made of tantalum or a tantalum compound) is formed on the surface of the multilayer wiring area to attenuate incident light on circuit element area.
Public/Granted literature
- US20090278221A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-11-12
Information query
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