Invention Grant
US07928518B2 P-channel power MIS field effect transistor and switching circuit
有权
P沟道功率MIS场效应晶体管和开关电路
- Patent Title: P-channel power MIS field effect transistor and switching circuit
- Patent Title (中): P沟道功率MIS场效应晶体管和开关电路
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Application No.: US12568415Application Date: 2009-09-28
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Publication No.: US07928518B2Publication Date: 2011-04-19
- Inventor: Tadahiro Ohmi , Akinobu Teramoto , Hiroshi Akahori , Keiichi Nii , Takanori Watanabe
- Applicant: Tadahiro Ohmi , Akinobu Teramoto , Hiroshi Akahori , Keiichi Nii , Takanori Watanabe
- Applicant Address: JP Miyagi JP Tokyo
- Assignee: Tadahiro Ohmi,Yazaki Corporation
- Current Assignee: Tadahiro Ohmi,Yazaki Corporation
- Current Assignee Address: JP Miyagi JP Tokyo
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Priority: JP2003-148275 20030526
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
Public/Granted literature
- US20100072519A1 P-CHANNEL POWER MIS FIELD EFFECT TRANSISTOR AND SWITCHING CIRCUIT Public/Granted day:2010-03-25
Information query
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