Invention Grant
- Patent Title: Integrated JFET and schottky diode
- Patent Title (中): 集成JFET和肖特基二极管
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Application No.: US12470391Application Date: 2009-05-21
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Publication No.: US07928509B2Publication Date: 2011-04-19
- Inventor: Chih-Feng Huang
- Applicant: Chih-Feng Huang
- Applicant Address: TW Hsin-Chu
- Assignee: Richtek Technology Corporation
- Current Assignee: Richtek Technology Corporation
- Current Assignee Address: TW Hsin-Chu
- Agency: Tung & Associates
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
The present invention discloses an integrated junction field effect transistor (JFET) and Schottky diode, comprising a depletion mode JFET which includes a source, a drain and a gate, wherein the drain is not provided with an ohmic contact such that it forms a Schottky diode.
Public/Granted literature
- US20100295101A1 INTEGRATED JFET AND SCHOTTKY DIODE Public/Granted day:2010-11-25
Information query
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