Invention Grant
- Patent Title: Gate structures in semiconductor devices
- Patent Title (中): 半导体器件中的栅极结构
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Application No.: US12428303Application Date: 2009-04-22
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Publication No.: US07928498B2Publication Date: 2011-04-19
- Inventor: Tae-Ho Cha , Seong-Hwee Cheong , Gil-Heyun Choi , Byung-Hee Kim , Hee-Sook Park , Jong-Min Baek
- Applicant: Tae-Ho Cha , Seong-Hwee Cheong , Gil-Heyun Choi , Byung-Hee Kim , Hee-Sook Park , Jong-Min Baek
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2008-0037556 20080423
- Main IPC: H01L29/788
- IPC: H01L29/788

Abstract:
A gate structure includes an insulation layer on a substrate, a first conductive layer pattern on the insulation layer, a metal ohmic layer pattern on the first conductive layer pattern, a diffusion preventing layer pattern on the metal ohmic layer pattern, an amorphous layer pattern on the diffusion preventing layer pattern, and a second conductive layer pattern on the amorphous layer pattern. The gate structure may have a low sheet resistance and desired thermal stability.
Public/Granted literature
- US20090267132A1 GATE STRUCTURES IN SEMICONDUCTOR DEVICES Public/Granted day:2009-10-29
Information query
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