Invention Grant
US07928473B2 Depletion-less photodiode with suppressed dark current and method for producing the same
有权
具有抑制暗电流的无耗光光电二极管及其制造方法
- Patent Title: Depletion-less photodiode with suppressed dark current and method for producing the same
- Patent Title (中): 具有抑制暗电流的无耗光光电二极管及其制造方法
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Application No.: US12850116Application Date: 2010-08-04
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Publication No.: US07928473B2Publication Date: 2011-04-19
- Inventor: Philip Klipstein
- Applicant: Philip Klipstein
- Applicant Address: IL Haifa
- Assignee: An Elbit Systems-Rafael Partnership
- Current Assignee: An Elbit Systems-Rafael Partnership
- Current Assignee Address: IL Haifa
- Agency: Frommer Lawrence & Haug LLP
- Agent William S. Frommer
- Priority: IL156744 20030702
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The invention relates to a photo-detector with a reduced G-R noise, which comprises a sequence of a p-type contact layer, a middle barrier layer and an n-type photon absorbing layer, wherein the middle barrier layer has an energy bandgap significantly greater than that of the photon absorbing layer, and there is no layer with a narrower energy bandgap than that in the photon-absorbing layer.
Public/Granted literature
- US20100295095A1 DEPLETION-LESS PHOTODIODE WITH SUPPRESSED DARK CURRENT AND METHOD FOR PRODUCING THE SAME Public/Granted day:2010-11-25
Information query
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