Invention Grant
- Patent Title: Localized static charge distribution precision measurement method and device
- Patent Title (中): 局部静电分配精度测量方法及装置
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Application No.: US12222577Application Date: 2008-08-12
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Publication No.: US07928384B2Publication Date: 2011-04-19
- Inventor: Zhaohui Cheng , Tasuku Yano , Seiko Omori
- Applicant: Zhaohui Cheng , Tasuku Yano , Seiko Omori
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Stites & Harbison PLLC
- Agent Juan Carlos A. Marquez, Esq.
- Priority: JP2007-222020 20070829
- Main IPC: G01N23/00
- IPC: G01N23/00

Abstract:
A charged particle beam device including a function for measuring localized static charges on a sample. A primary charged particle beam scans a sample positioned in a mirror state to acquire an image. The acquired image may be an image of the sample or may be an image of a structural component in the charged particle optical system. The acquired image is compared with a standard sample image and the localized static charge is measured.
Public/Granted literature
- US20090057557A1 Localized static charge distribution precision measurement method and device Public/Granted day:2009-03-05
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