Invention Grant
US07904788B2 Methods of varying read threshold voltage in nonvolatile memory
有权
在非易失性存储器中改变读取阈值电压的方法
- Patent Title: Methods of varying read threshold voltage in nonvolatile memory
- Patent Title (中): 在非易失性存储器中改变读取阈值电压的方法
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Application No.: US11556615Application Date: 2006-11-03
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Publication No.: US07904788B2Publication Date: 2011-03-08
- Inventor: Yigal Brandman , Kevin M. Conley
- Applicant: Yigal Brandman , Kevin M. Conley
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H03M13/00
- IPC: H03M13/00
Abstract:
Data is read from a nonvolatile memory array using one or more read voltages that are adjusted during memory life. Programming target voltages and read voltages may be adjusted together over memory life to map memory states to an increasingly wide threshold window. Individual memory states are mapped to sub-ranges that are made wider, reducing errors.
Public/Granted literature
- US20080123419A1 Methods of Varying Read Threshold Voltage in Nonvolatile Memory Public/Granted day:2008-05-29
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