Invention Grant
US07903467B2 Programming method of multi-bit flash memory device for reducing programming error
有权
用于减少编程错误的多位闪存器件的编程方法
- Patent Title: Programming method of multi-bit flash memory device for reducing programming error
- Patent Title (中): 用于减少编程错误的多位闪存器件的编程方法
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Application No.: US12007217Application Date: 2008-01-08
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Publication No.: US07903467B2Publication Date: 2011-03-08
- Inventor: Seung-Jae Lee
- Applicant: Seung-Jae Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2007-0002971 20070110
- Main IPC: G11C16/34
- IPC: G11C16/34
Abstract:
A method of programming a plurality of memory cells of a flash memory device by selectively changing a threshold voltage distribution thereof from a first distribution to a second distribution, the method includes selecting at least one of the memory cells to be programmed, and programming the at least one selected memory cell to a voltage higher than a verify voltage, wherein the verify voltage is one of threshold voltages included in the first distribution or is higher than the threshold voltages included in the first distribution.
Public/Granted literature
- US20080165579A1 Programming method of multi-bit flash memory device for reducing programming error Public/Granted day:2008-07-10
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