Invention Grant
- Patent Title: H-bridge circuit
- Patent Title (中): H桥电路
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Application No.: US12585749Application Date: 2009-09-23
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Publication No.: US07902884B2Publication Date: 2011-03-08
- Inventor: Miyuki Kanai , Hirokazu Fujimaki , Takeshi Shimizu
- Applicant: Miyuki Kanai , Hirokazu Fujimaki , Takeshi Shimizu
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, P.C.
- Priority: JP2008-244235 20080924
- Main IPC: H02P1/22
- IPC: H02P1/22

Abstract:
An H-bridge circuit includes a lower-arm field-effect transistor and a current supplying element that turns on when the drain of the lower-arm field-effect transistor is negatively biased due to regenerative current. When turned on, the current supplying element conducts current from the source to the drain of the lower-arm field-effect transistor, in parallel with a parasitic diode inherent in the lower-arm field effect transistor. The current supplying element competes with other parasitic elements that conduct current from peripheral circuitry to the drain of the lower-arm field-effect transistor, thereby reducing the amount of such current drawn through the peripheral circuitry and lessening the impact of the regenerative current on the peripheral circuits.
Public/Granted literature
- US20100073039A1 H-Bridge circuit Public/Granted day:2010-03-25
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