Invention Grant
- Patent Title: Switching power supply device and semiconductor integrated circuit
- Patent Title (中): 开关电源装置和半导体集成电路
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Application No.: US12403966Application Date: 2009-03-13
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Publication No.: US07902799B2Publication Date: 2011-03-08
- Inventor: Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
- Applicant: Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2004-020517 20040128
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F1/40

Abstract:
The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
Public/Granted literature
- US20090179620A1 SWITCHING POWER SUPPLY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2009-07-16
Information query
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