Invention Grant
US07902599B2 Integrated circuit having long and short channel metal gate devices and method of manufacture
有权
具有长和短沟道金属栅极器件的集成电路及其制造方法
- Patent Title: Integrated circuit having long and short channel metal gate devices and method of manufacture
- Patent Title (中): 具有长和短沟道金属栅极器件的集成电路及其制造方法
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Application No.: US12607710Application Date: 2009-10-28
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Publication No.: US07902599B2Publication Date: 2011-03-08
- Inventor: Richard J. Carter , Michael J. Hargrove , George J. Kluth , John G. Pellerin
- Applicant: Richard J. Carter , Michael J. Hargrove , George J. Kluth , John G. Pellerin
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
Embodiments of an integrated circuit are provided. In one embodiment, the integrated circuit includes a substrate, a short channel (SC) device, and a long channel (LC) device. The short channel device includes an SC gate insulator overlying a first portion of the substrate, an SC metal gate overlying the SC gate insulator, a polycrystalline silicon layer overlying the metal gate, and a silicide layer formed on the polycrystalline silicon layer. The long channel (LC) device includes an LC gate insulator overlying a second portion of the substrate and an LC metal gate overlying the LC gate insulator. An etch stop layer overlies an upper surface of the substrate, and an interlayer dielectric overlies an upper surface of the etch stop layer. An SC cap is disposed in the interlayer dielectric, overlies the SC device, and is formed substantially from the same metal as is the LC metal gate.
Public/Granted literature
- US20100044782A1 INTEGRATED CIRCUIT HAVING LONG AND SHORT CHANNEL METAL GATE DEVICES AND METHOD OF MANUFACTURE Public/Granted day:2010-02-25
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