Invention Grant
- Patent Title: Planar voltage contrast test structure
- Patent Title (中): 平面电压对比测试结构
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Application No.: US11558079Application Date: 2006-11-09
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Publication No.: US07902548B2Publication Date: 2011-03-08
- Inventor: Seng-Keong Victor Lim , Dennis Tan , Tze Ho Simon Chan
- Applicant: Seng-Keong Victor Lim , Dennis Tan , Tze Ho Simon Chan
- Applicant Address: SG Singapore
- Assignee: Chartered Semiconductor Manufacturing Ltd.
- Current Assignee: Chartered Semiconductor Manufacturing Ltd.
- Current Assignee Address: SG Singapore
- Agent Mikio Ishimaru
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
An integrated circuit and e-beam testing method are disclosed. The integrated circuit includes a test structure with a ground grid, a metal pad having a space therein and positioned within the ground grid, and a metal line connected to the ground grid and positioned in the space. Structures for detecting open circuits and short circuits are described.
Public/Granted literature
- US20070085556A1 PLANAR VOLTAGE CONTRAST TEST STRUCTURE Public/Granted day:2007-04-19
Information query
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