Invention Grant
- Patent Title: Immersion photolithography system and method using inverted wafer-projection optics interface
- Patent Title (中): 浸入式光刻系统及方法采用倒置晶片投影光学接口
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Application No.: US11187010Application Date: 2005-07-22
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Publication No.: US07898643B2Publication Date: 2011-03-01
- Inventor: Harry Sewell
- Applicant: Harry Sewell
- Applicant Address: NL Veldhoven
- Assignee: ASML Holding N.V.
- Current Assignee: ASML Holding N.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G03B27/42
- IPC: G03B27/42
Abstract:
A liquid immersion photolithography system includes an exposure system that exposes a substrate with electromagnetic radiation, and also includes an optical system that images the electromagnetic radiation on the substrate. A liquid is between the optical system and the substrate. The projection optical system is positioned below the substrate.
Public/Granted literature
- US20050254031A1 Immersion photolithography system and method using inverted wafer-projection optics interface Public/Granted day:2005-11-17
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