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Invention Grant
US07898301B2 Zero input current-drain comparator with high accuracy trip point above supply voltage 有权
零输入电流 - 漏极比较器，具有高于电源电压的高精度跳变点

Zero input current-drain comparator with high accuracy trip point above supply voltage
Abstract:
A comparator circuit (300) has a first field effect transistor (FET) (307) with a supply voltage (301) connection and a diode connected FET (303) connected in series to form the first circuit leg of the comparator (300). A second diode connected FET (309) and a second FET (305) in series form the second circuit leg. The first FET (307) and said second FET (305) are approximately equal sized FETs. Another embodiment is an integrated circuit (401) with two n-channel FETs. A first diode connected FET (303) is connected to the first n-channel FET (307) in series to form the first circuit leg of a comparator (300) and a second diode connected FET (309) is connected to a second n-channel FET (305) in series to form the second circuit leg of the comparator. The two n-channel FETs that form the differential pair are approximately equal in size. The trip point is high with respect to the supply voltage.
Abstract(Chinese):

比较器电路（300）具有电源电压（301）连接的第一场效应晶体管（FET）（307）和串联连接的二极管连接的FET（303），以形成比较器（300）的第一电路支路。 串联的第二二极管连接的FET（309）和第二FET（305）形成第二电路支路。 第一FET（307）和所述第二FET（305）大致相等尺寸的FET。 另一个实施例是具有两个n沟道FET的集成电路（401）。 第一二极管连接的FET（303）串联连接到第一n沟道FET（307）以形成比较器（300）的第一电路支路，并且第二二极管连接的FET（309）连接到第二n沟道FET 通道FET（305）串联以形成比较器的第二电路支路。 形成差分对的两个n沟道FET的大小近似相等。 跳闸点相对于电源电压较高。

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