Invention Grant
- Patent Title: Focused ion beam defining process enhancement
- Patent Title (中): 聚焦离子束定义过程增强
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Application No.: US11809055Application Date: 2007-05-31
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Publication No.: US07886260B2Publication Date: 2011-02-08
- Inventor: Hsin Wey Wang , Ling How Goh
- Applicant: Hsin Wey Wang , Ling How Goh
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Winkle, PLLC
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
Embodiments employ a method to define points on selected nets in a netlist for a focused ion beam (FIB) to create open circuits. A selected net is partitioned into a set of sub-segments, and after considering all metal layers at and above that of the selected net, a subset of the set of sub-segments is formed as those sub-segments having minimum distances from the considered metal layers greater than some threshold. All contiguous sub-segments in the subset of the set of sub-segments are grouped into groups. The midpoints of such groups, and any isolated sub-segments, are possible candidate for FIB points. For some embodiments, the midpoint of the longest (or one of the longest) groups of sub-segments is chosen as the FIB point for the selected net. Other embodiments are described and claimed.
Public/Granted literature
- US20080301615A1 Focused ion beam defining process enhancement Public/Granted day:2008-12-04
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