Invention Grant
- Patent Title: Semiconductor memory test device and method thereof
- Patent Title (中): 半导体存储器测试装置及其方法
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Application No.: US12385116Application Date: 2009-03-31
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Publication No.: US07886206B2Publication Date: 2011-02-08
- Inventor: Je-Young Park , Ki-Sang Kang
- Applicant: Je-Young Park , Ki-Sang Kang
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2005-0125387 20051219
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A semiconductor memory test device and method thereof are provided. The example semiconductor memory test device may include a fail memory configured to store at least one test result of a memory under test, a mode selecting unit configured to output a selection signal for selecting a memory address protocol of the fail memory based upon which one of a plurality of test modes is active in the memory under test and an address arranging unit configured to arrange address signals to conform with the selected memory address protocol in response to the selection signal received from the mode selecting unit.
Public/Granted literature
- US20090199059A1 Semiconductor memory test device and method thereof Public/Granted day:2009-08-06
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