Invention Grant
- Patent Title: Surface emitting semiconductor laser element
- Patent Title (中): 表面发射半导体激光元件
-
Application No.: US12219997Application Date: 2008-07-31
-
Publication No.: US07885312B2Publication Date: 2011-02-08
- Inventor: Tomofumi Kise , Noriyuki Yokouchi
- Applicant: Tomofumi Kise , Noriyuki Yokouchi
- Applicant Address: JP Tokyo
- Assignee: Furukawa Electric Co., Ltd.
- Current Assignee: Furukawa Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Kubotera & Associates LLC
- Priority: JP2006-064247 20060309
- Main IPC: H01S3/08
- IPC: H01S3/08

Abstract:
A surface emitting laser is provided with an upper reflecting mirror having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror. An upper electrode is formed on the point defect at the center, and element resistance is reduced. A material transparent to a wavelength of the laser beam is used for a substrate. The emission efficiency is improved by reducing the element resistance of the photonic crystal surface emitting laser.
Public/Granted literature
- US20080298420A1 Surface emitting semiconductor laser element Public/Granted day:2008-12-04
Information query