Invention Grant
- Patent Title: Edge-emitting semiconductor laser chip
- Patent Title (中): 边缘发射半导体激光芯片
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Application No.: US11824877Application Date: 2007-07-02
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Publication No.: US07885306B2Publication Date: 2011-02-08
- Inventor: Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
- Applicant: Christoph Eichler , Volker Härle , Christian Rumbolz , Uwe Strauss
- Applicant Address: DE Regensburg
- Assignee: Osram Opto Semiconductors GmbH
- Current Assignee: Osram Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Cohen Pontani Lieberman & Pavane LLP
- Priority: DE102006030251 20060630
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
What is specified is an edge emitting semiconductor laser chip comprising a carrier substrate (1), an interlayer (2) promoting adhesion between the carrier substrate (1) and a component structure (50) of the edge emitting semiconductor laser chip, and the component structure (50) comprising an active zone (5) provided for generating radiation.
Public/Granted literature
- US20080049801A1 Edge-emitting semiconductor laser chip Public/Granted day:2008-02-28
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