Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US12502402Application Date: 2009-07-14
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Publication No.: US07885130B2Publication Date: 2011-02-08
- Inventor: Kenjyu Shimogawa , Hiroshi Furuta
- Applicant: Kenjyu Shimogawa , Hiroshi Furuta
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2008-204509 20080807
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor integrated circuit according to an exemplary embodiment of the present invention includes a plurality of memory cells connected to one word line; a plurality of sense amplifier circuits that are connected to the memory cells and divided into an N number of groups; and N number of data inversion processing circuits that respectively receive data read out from the N number of groups of sense amplifier circuits, in which after a sense amplifier circuit of a first group terminates operation, a sense amplifier circuit of a second group different from the first group operates, and each of the data inversion processing circuits performs data inversion processing based on the data read out from each of the groups of sense amplifier circuits, and outputs the data to an output terminal of each of the data inversion processing circuits.
Public/Granted literature
- US20100034040A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2010-02-11
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