Invention Grant
US07885112B2 Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
有权
非易失性存储器和用于片内和页之间的数据的片上伪随机化的方法
- Patent Title: Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
- Patent Title (中): 非易失性存储器和用于片内和页之间的数据的片上伪随机化的方法
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Application No.: US11852229Application Date: 2007-09-07
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Publication No.: US07885112B2Publication Date: 2011-02-08
- Inventor: Yan Li , Yupin Kawing Fong , Nima Mokhlesi
- Applicant: Yan Li , Yupin Kawing Fong , Nima Mokhlesi
- Applicant Address: US CA Milpitas
- Assignee: Sandisk Corporation
- Current Assignee: Sandisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Tremaine LLP
- Agent Davis Wright
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
Features within an integrated-circuit memory chip enables scrambling or randomization of data stored in an array of nonvolatile memory cells. In one embodiment, randomization within each page helps to control source loading errors during sensing and floating gate to floating gate coupling among neighboring cells. Randomization from page to page helps to reduce program disturbs, user read disturbs, and floating gate to floating gate coupling that result from repeated and long term storage of specific data patterns. In another embodiment, randomization is implemented both within a page and between pages. The scrambling or randomization may be predetermined, or code generated pseudo randomization or user driven randomization in different embodiments. These features are accomplished within the limited resource and budget of the integrated-circuit memory chip.
Public/Granted literature
- US20090067244A1 NONVOLATILE MEMORY AND METHOD FOR ON-CHIP PSEUDO-RANDOMIZATION OF DATA WITHIN A PAGE AND BETWEEN PAGES Public/Granted day:2009-03-12
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