Invention Grant
- Patent Title: Memory and method for dissipation caused by current leakage
- Patent Title (中): 由电流泄漏引起的耗散的存储和方法
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Application No.: US12273414Application Date: 2008-11-18
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Publication No.: US07885109B2Publication Date: 2011-02-08
- Inventor: Wen-Pin Lin , Shyh-Shyuan Sheu , Lieh-Chiu Lin , Pei-Chia Chiang
- Applicant: Wen-Pin Lin , Shyh-Shyuan Sheu , Lieh-Chiu Lin , Pei-Chia Chiang
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Priority: TW96145894A 20071203
- Main IPC: G11C11/04
- IPC: G11C11/04
Abstract:
Memories with low power consumption and methods for suppressing current leakage of a memory. The memory cell of the memory has a storage element and a transistor coupled in series. The invention sets a voltage across the transistor approaching to zero when the memory is not been accessed.
Public/Granted literature
- US20090141548A1 MEMORY AND METHOD FOR DISSIPATION CAUSED BY CURRENT LEAKAGE Public/Granted day:2009-06-04
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