Invention Grant
- Patent Title: Thin film magnetic memory device writing data with bidirectional current
- Patent Title (中): 薄膜磁存储器件用双向电流写入数据
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Application No.: US12481392Application Date: 2009-06-09
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Publication No.: US07885096B2Publication Date: 2011-02-08
- Inventor: Hideto Hidaka
- Applicant: Hideto Hidaka
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2001-394285(P) 20011226; JP2002-288755(P) 20021001
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C5/08 ; G11C7/00

Abstract:
An end of a selected bit line in a selected column is electrically coupled to an end of a corresponding current return line by one of first and second write column select gates, which are selectively turned on in response to results of column selection. A data write circuit sets the other end of the selected bit line and the other end of the current return line to one and the other of a power supply voltage and a ground voltage in accordance with a level of write data via one of first and second data buses and an inverted data bus, respectively.
Public/Granted literature
- US20090244959A1 THIN FILM MAGNETIC MEMORY DEVICE WRITING DATA WITH BIDIRECTIONAL CURRENT Public/Granted day:2009-10-01
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