Invention Grant
US07885092B2 Semiconductor storage device and operation method thereof 有权
半导体存储装置及其操作方法

  • Patent Title: Semiconductor storage device and operation method thereof
  • Patent Title (中): 半导体存储装置及其操作方法
  • Application No.: US12389836
    Application Date: 2009-02-20
  • Publication No.: US07885092B2
    Publication Date: 2011-02-08
  • Inventor: Masaya Uematsu
  • Applicant: Masaya Uematsu
  • Applicant Address: JP Tokyo
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: SNR Denton US LLP
  • Priority: JP2008-060739 20080311
  • Main IPC: G11C11/00
  • IPC: G11C11/00
Semiconductor storage device and operation method thereof
Abstract:
A semiconductor storage device includes: a bit line; a first word line; a second word line; a first inverter in which one terminal of a first load transistor is connected to a first driver transistor and their junction point forms a first node; a second inverter in which one terminal of a second load transistor is connected to a second driver transistor and their junction point forms a second node; a first write transistor one terminal of which is connected to the first load transistor and the other terminal of which is connected to a power supply voltage; a second write transistor one terminal of which is connected to the first driver transistor and the other terminal is connected to a reference potential; and an access transistor one terminal of which is connected to the first node and the other terminal of which is connected to the bit line.
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