Invention Grant
- Patent Title: Semiconductor storage device and operation method thereof
- Patent Title (中): 半导体存储装置及其操作方法
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Application No.: US12389836Application Date: 2009-02-20
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Publication No.: US07885092B2Publication Date: 2011-02-08
- Inventor: Masaya Uematsu
- Applicant: Masaya Uematsu
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2008-060739 20080311
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A semiconductor storage device includes: a bit line; a first word line; a second word line; a first inverter in which one terminal of a first load transistor is connected to a first driver transistor and their junction point forms a first node; a second inverter in which one terminal of a second load transistor is connected to a second driver transistor and their junction point forms a second node; a first write transistor one terminal of which is connected to the first load transistor and the other terminal of which is connected to a power supply voltage; a second write transistor one terminal of which is connected to the first driver transistor and the other terminal is connected to a reference potential; and an access transistor one terminal of which is connected to the first node and the other terminal of which is connected to the bit line.
Public/Granted literature
- US20090231908A1 SEMICONDUCTOR STORAGE DEVICE AND OPERATION METHOD THEREOF Public/Granted day:2009-09-17
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