Invention Grant
- Patent Title: Low leakage voltage level shifting circuit
- Patent Title (中): 低泄漏电压电平移位电路
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Application No.: US12494082Application Date: 2009-06-29
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Publication No.: US07884643B2Publication Date: 2011-02-08
- Inventor: Guang-Cheng Wang , Ker-Min Chen , Kuo-Ji Chen
- Applicant: Guang-Cheng Wang , Ker-Min Chen , Kuo-Ji Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: K&L Gates LLP
- Main IPC: H03K19/094
- IPC: H03K19/094

Abstract:
A voltage level shifting circuit for an integrated circuit system having an internal low voltage power supply (VCCL) and an external high voltage power supply (VCCH) is disclosed, the voltage level shifting circuit comprises a pair of cross coupled PMOS transistors connected to the VCCH, a NMOS transistor with a source connected to a ground (VSS) and a gate connected to a first signal swinging between the VCCL and the VSS, and a switching device coupled between a drain of one of the pair of PMOS transistors and a drain of the NMOS transistor, wherein the pair of PMOS transistors are high voltage transistors and the switching device is off when the VCCL is below a predetermined voltage level, and the switching device is on when the VCCL is above the predetermined voltage level.
Public/Granted literature
- US20100026366A1 Low Leakage Voltage Level Shifting Circuit Public/Granted day:2010-02-04
Information query
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