Invention Grant
US07884458B2 Decoupling capacitor, wafer stack package including the decoupling capacitor, and method of fabricating the wafer stack package
有权
去耦电容器,包括去耦电容器的晶片堆叠封装以及制造晶片堆叠封装的方法
- Patent Title: Decoupling capacitor, wafer stack package including the decoupling capacitor, and method of fabricating the wafer stack package
- Patent Title (中): 去耦电容器,包括去耦电容器的晶片堆叠封装以及制造晶片堆叠封装的方法
-
Application No.: US11935953Application Date: 2007-11-06
-
Publication No.: US07884458B2Publication Date: 2011-02-08
- Inventor: Sun-Won Kang , Seung-Duk Baek
- Applicant: Sun-Won Kang , Seung-Duk Baek
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2006-0115428 20061121
- Main IPC: H01L23/02
- IPC: H01L23/02

Abstract:
A decoupling capacitor, a wafer stack package including the decoupling capacitor, and a method of fabricating the wafer stack package are provided. The decoupling capacitor may include a first electrode formed on an upper surface of a first wafer, a second electrode formed on a lower surface of a second wafer, and an adhesive material having a high dielectric constant and combining the first wafer with the second wafer. In the decoupling capacitor the first and second electrodes operate as two electrodes of the decoupling capacitor, and the adhesive material operates as a dielectric of the decoupling capacitor.
Public/Granted literature
Information query
IPC分类: