Invention Grant
- Patent Title: Impact sensor and method for manufacturing the impact sensor
- Patent Title (中): 冲击传感器及制造冲击传感器的方法
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Application No.: US12458494Application Date: 2009-07-14
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Publication No.: US07884429B2Publication Date: 2011-02-08
- Inventor: Nobuo Ozawa
- Applicant: Nobuo Ozawa
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, P.C.
- Priority: JP2008-184837 20080716
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
An impact sensor comprises a silicon substrate; an insulating layer formed over the silicon substrate; a plurality of beams having flexibility that are formed of conductive silicon material; a fixing portion to fix a fixed end of each of the beams, the fixing portion being formed of conductive silicon material; a fixed end line at whose one end is formed the fixing portion, the fixed end line being formed of conductive silicon material on the insulating layer; and a free end line having a pressing portion that faces a free end of each of the beams via a space, the free end line being formed of conductive silicon material on the insulating layer. Respective beam widths, each measured in a direction orthogonal to a length direction joining the fixed end and the free end, of the plurality of beams are set different from each other, thus reducing the space occupied by the sensor.
Public/Granted literature
- US20100015808A1 Impact sensor and method for manufacturing the impact sensor Public/Granted day:2010-01-21
Information query
IPC分类: