A ferroelectric memory device includes a field effect transistor formed over a semiconductor substrate and including first and second diffusion regions, an interlayer insulation film formed over the semiconductor substrate so as to cover the field effect transistor, a conductive plug formed in the interlayer insulation film in contact with the first diffusion region, and a ferroelectric capacitor formed over the interlayer insulation in contact with the conductive plug. The ferroelectric capacitor includes a ferroelectric film and upper and lower electrodes sandwiching the ferroelectric film respectively from above and below. The lower electrode is connected electrically to the conductive plug, and wherein a layer containing aluminum and oxygen is interposed between the conductive plug and the lower electrode, a layer containing nitrogen is interposed between the layer containing aluminum and oxygen and the lower electrode, and a self-aligned layer of a substance having a self-orientation is interposed between the layer containing nitrogen and the lower electrode.